Dynamic Dust Volume RoHS Compliance ESD Fabric Clothing for Semiconductor

• Customization: Available
• Gender: Male
• Season: Spring & Autumn
• Model NO.: QS-yf-0003
• Age Group: Adults
• Usage: Mining Industry, Food, Machinery, Electronic, Electric power, Petroleum, Chemical
• Function: Anti-Static, Waterproof, Anti-Radiant Heat, Wearproof
• Thickness: Thin
• Length: Lengthen
• Material: Polyester
• Transport Package: by Carton
• Specification: XS, S, M, L, XL
• Trademark: QS
• Origin: China
• HS Code: 6307900090
• Production Capacity: 20000 PCS/ Day
• Package Size: 10.00cm * 10.00cm * 15.00cm
• Package Gross Weight: 0.020kg

Product Description

Dynamic Dust Volume RoHS Compliance Anti-ESD Fabric Clothing For Semiconductor


Features:
1. Surface resistivity: 1x10^5-10⁹ Ω 
2. Friction voltage: less than 100V (special mesh)
3. Electrostatic dissipation time: 500V reduced to 500V less than 0.1 S
4. The dynamic dust volume (= 0.5 mu m) is less than or equal to 500ea/ft3 CLASS100 ~ 1000


Product description:

We have carried out strict quality control on the fabric production from the initial selection of yarns and conductive filaments to the final textile dyeing and finishing to effectively guarantee the various functionalities of the fabric.
Our professional production team has many years of production experience, from marking, cutting, sewing, ironing, etc., are strictly monitored by professionals.
The large professional cleaning centers, supporting facilities and professional operators in Suzhou and Dongguan ensure the strict cleanliness of the dust-free clothes.
After cleaning, strict quality inspections are carried out for anti-static and dust-free properties.


Product specification:

ITEM	T/C THICK	T/C THIN	Knitting Conductive
COMPOSITION	T/C 65%/35%	T/C 65%/35%	Polyester 100%
STRUCTURE	2/1 twill 1.5mm interval of conductive filament	/1 twill 1.5mm interval of conductive filament	Warp-knitted
WEIGHT	240g/m^2	140g/m^2	100g/m^2
THICKNESS	0.45mm	0.28mm	0.30mm
WIDTH	150cm	150cm	170cm
DENSITY	Warp 110 Weft 56	Warp 110 Weft 56	Weft 32
YARNTYPE	Warp T/C J34s/2 Weft T/C J34s/2	Warp T/C J34s Weft T/C J34s	68D
SURFACE RESISTIVITY	10^8~10^10Ω/unit	10^8~10^10Ω/unit	10^8~10^10Ω/unit
ELECTRICATION POTENTIAL	4.24µc/m^2	4.15µc/m^2	0.1µc/m^2
DECAY TIME	2.0s	2.0c	0.1c
AIR PERMEABILITY	45c.c/cm^2/sec	150c.c/cm^2/sec	300c.c/cm^2/sec
TENSILE STRENGTH	Warp 770N Weft 1720N	Warp 770N Weft 1720N	/
TEAR STRENGTH	Warp 3970gf Weft5310gf	Warp 2550gf Weft 3300gf	/
COLOR RETENTION	4~5

Apecification field:

1. Magnetic head
2. Semiconductor
3. Liquid crystal,
4. Computer peripheral manufacturing industry

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